作者声明

2011年第3期《电子与封装》杂志中《超薄氧化层制备及其可靠性研究》一文，摘要中“氧化层最大击穿电压值49.1V”有误，现更正为“最大击穿电压为8.0V。”

正确的摘要内容如下：“通过实验优化，在800℃、O2/DCE、N2退火条件下，可以制备50A氧化层，其可靠性能为：最大击穿电压8.0V，平均击穿电压7.1V，击穿电场16.62 mV.cm-1，早期失效率3.85%，击穿电荷量QBD>15C.cm-2点可达61.54%。”英文摘要：“In the process of N/O Dry oxidation, N2anneal can effectively improve the densify and QBD of ultra thin oxide. The 50A oxide with excellent reliability, which including maximize breakdown voltage 8.0V,averagen breakdown voltage 7.1V, breakdown electric field 16.62 mV.cm-1, the ratio of initial-invalidation 3.85%,and 61.54% points with QBD>15C.cm-2,was successfully prepared.”