Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

Yuehao Zhao(赵月豪), Haoran Sun(孙浩然), Zhe Sheng(盛喆), David Wei Zhang(张卫),Peng Zhou(周鹏),‡, and Zengxing Zhang(张增星),§

1School of Microelectronics,Fudan University,Shanghai 200433,China

2National Integrated Circuit Innovation Center,Shanghai 201203,China

3School of Information Science and Technology,Hangzhou Normal University,Hangzhou 311121,China

Keywords: two-dimensional material,ambipolar semiconductor,semiconductor device

1.Introduction

Over the past few decades,integrated circuits(ICs)have experienced rapid growth following Moore’s Law.[1]As the semiconductor device size continues to shrink, the scale of ICs continues to increase from large-scale integration to the current very large-scale integration, driving the informationization of human society.However, the characteristic dimension of transistors is approaching the physical limits, which will bring inevitable challenges such as short-channel effects,quantum tunneling effects, and thermal carrier effects.[2-4]In the foreseeable future,the improvement of the computing capacity and energy efficiency will be difficult to rely solely on the shrinking gain.On the other hand,the rapid advancement of information technology, like artificial intelligence and big data technologies are being increasingly applied in various fields,[5-8]which demand increasing tough requirements on the computing capacity,energy efficiency,time delay and cost.The traditional von Neumann architecture has shown limitations in handling these highly complex and data-intensive tasks.[9]This is primarily due to the separation of its computational and storage functions,[10-12]leading to the so-called memory wall problem.[13,14]Therefore,it is urgent to explore new materials, new-principle devices and new computing architectures to break the limitations of Moore’s Law and the von Neumann bottleneck,holding the potential to drive a new wave of industrial revolution.[4]

Recently,two-dimensional(2D)semiconductor materials have gained intensive attention due to their unique physical and chemical properties.[15-17]2D semiconductor materials possess an ultrathin thickness and exhibit excellent electrical,optical,and mechanical properties.[18-25]Utilizing such ultrathin 2D materials as the channel in transistors enables a possibility of the high performance retention with the device size continuing to shrink.Therefore, they are considered as one of the most important candidates to overcome the size reduction bottleneck of transistors and have a wide range of applications in emerging electronic and optoelectronic devices.[26-32]Among various 2D materials, ambipolar 2D semiconductors are of ambipolar transport characteristics under gate voltage control with the major charge carriers flexibly modulated between electrons and holes at demanded concentrations.They have the ability to rapidly, dynamically, and reversibly tune the dominant carrier type through electric fields.This unique property allows for the design and fabrication of new-principle devices like reconfigurable devices, offering the capability to program electronic and optoelectronic circuits according to specific requirements and providing exciting functionalities for future semiconductor products.[33]Compared to mainstream reconfigurable circuits like field-programmable gate arrays (FPGA), reconfigurable circuits based on ambipolar 2D semiconductors enable the possibility of reconfiguring circuits at the device levels.So far, the significance of ambipolar 2D semiconductors has been recognized with lots of significant advancements,and a few specialized reviews have been composed in this field.[34-37]Here we dedicate an overview on the recent progress of ambipolar 2D semiconductors applied in reconfigurable devices and circuits.We hope the review will help readers to well understand the applications of ambipolar 2D semiconductors,and push forward exploring newprinciple devices and new-architecture computing circuits,and even their product applications.

2.Ambipolar 2D semiconductors

Ambipolar semiconductors refer to the ones that the charge carriers can be reversibly and flexibly modulated, including the major carrier type and concentration.[15]Generally, the conduction in semiconductors primarily relies on electrons and holes.Intrinsic semiconductors typically exhibit low carrier concentration and poor conductivity.The concentration of electrons or holes is often augmented through doping high-valent or low-valent chemical elements, which is dominant in current industrial electronic and optoelectronic applications.For 2D semiconductors, there have a variety of strategies to complete p-/n-type modulation,[38]such as intrinsic defect tailoring,[39,40]substitutional doping,[41]surface charge transfer,[42,43]chemical intercalation,[44]electrostatic field modulation,[45,46]dielectric interface engineering,[47,48]annealing,[32]and so on.Taking electrostatic field modulation as an example,when a positive gate voltage is applied,according to the working principle of a capacitor, negative charges(electrons) will accumulate in the 2D semiconductor channel layer, resulting in an n-type behavior of transistors, as shown in Fig.1(a).Conversely, when a negative gate voltage is applied,the accumulation of positive charges(holes)in the channel layer leads to a p-type behavior of transistors,as shown in Fig.1(b).As a result,the transfer characteristics of field-effect transistors(FETs)present V-shaped curves,as shown in that of graphene,black phosphorus(BP)and WSe2FETs(Figs.1(c)-1(h)).[35]

Fig.1.Ambipolar 2D crystals can be flexibly tuned by external electrical fields between(a)n-type and(b)p-type.Panels(c),(e)and(g)are the schematic crystal structures of typical ambipolar 2D crystals of few-layer graphene,WSe2 and black phosphorus(BP).Panels(d),(f)and(h)are the transfer characteristic curves of the corresponding FETs.All figures are from Ref.[35].

Although there are diverse methods for p-/n-type modulation in semiconductors, achieving dynamic regulation between p-type and n-type is challenging.For example, with Nb dopant, MoS2performs a p-type behavior,[49]while Re makes it as an n-type semiconductor.[50]The p-type of WSe2can be obtained with Au dopant,[51]and Sn-doped WS2exhibits n-type property.[52]These chemical dopants are nonvolatile.Once the doping happens and the devices are packaged, it is difficult to modulate the major charge carriers again.[53]Strain can also affect the electrical properties of 2D semiconductors.[54]Similarly, after devices are packaged, it is difficult to modulate them again at the device level.The ultra-thin characteristics of 2D materials make them vulnerable to external field regulation,which in turn enables the modification of their carrier doping concentration and polarity relatively easily.[55]This capability is expected to be utilized in the design and fabrication of new device structures and even to generate novel functionalities for the improvement and enhancement of traditional semiconductors.In this paper, we mainly focus on the ambipolar semiconductors that are driven by such an electrostatic field.

Graphene is a 2D material composed of carbon atoms,[56,57]which is the first widely studied ambipolar 2D material.So far, ambipolar behavior has been found in a variety of 2D materials, mainly in elemental materials and metal chalcogenide 2D semiconductors,[15]including elemental semiconductors like graphene,[57]phosphorene (BP),[58]silicene,[59]germanane,[60]tellurene,[61]and black arsenic;[62]metal disulfide 2D semiconductors like MoS2,[63,64]WS2,[65,66]ReS2,[67,68]and SnS2;[69]metal diselenide 2D semiconductors like MoSe2,[70,71]WSe2,[72-74]ReSe2,[67]PtSe2,[75,76]and PdSe2;[77-79]metal ditelluride 2D semiconductors like MoTe2,[80,81]and WTe2;[82,83]ternary and other chalcogenide 2D semiconductors like Mo(Se1-xTex)2,[84]W(Se1-xTex)2,[85]SnSe,[86]SnS,[87]InSe,[88]InSb,[89]Cr2S3,[90]Nb2SiTe4,[91]and(BixSb1-x)Te3.[92]In addition to the aforementioned inorganic 2D materials, some organic 2D materials also exhibit similar properties.[34]

3.Ambipolar 2D semiconductors for reconfigurable electronics

Under the modulation of external electric field, ambipolar 2D crystals exhibit tunable transport behavior of charge carriers.As a result, it is possible to develop electrostatically tunable and reconfigurable devices through specific device structure designs, like ambipolar fieldeffect transistors/memories[93-95]and gate-tunable p-n junctions/Schottky junctions.[96,97]These devices are of various novel electronic functions for rectification and logic operations.Such reconfigurable devices enrich the application scenarios of circuits and demonstrate significant potential in achieving multi-purpose integration of circuits,reducing transistor redundancy, simplifying circuit design, and enhancing integrated circuit performance.[30,53]

Fig.2.(a)Schematic of ambipolar 2D WSe2 CFET device.(b)Transfer characteristic curves of the top WSe2 transistor.(c)Output characteristic curves of the top WSe2 transistor.(d) Equivalent circuit diagram of the inverter based on the CFET with series-connected vertical stacked transistors.(e) and (f)VOUT-VIN curves of the ambipolar WSe2 CFET inverter working in the first and third quadrants.All figures are from Ref.[98].

Fig.3.(a) Schematic of the MoTe2/MoS2 heterojunction device.(b) Transfer characteristic curves of the MoTe2 FET, MoS2 FET, and MoTe2/MoS2 heterojunction devices.(c) Principle of the anti-ambipolar frequency multiplier and schematic diagram of the multiplier circuit.(d)Schematic diagram of a type-1 device composed of a WS2-graphene vertical junction and a graphene-WSe2 lateral junction(top figure)and a type-2 device composed of a WS2-graphene lateral junction and a graphene-WSe2 vertical junction(bottom figure).The panel also shows the ID-VG characteristic curves.(e)Band structure of the drain-WS2-graphene(top)and graphene-WSe2-source(bottom).(f)Schematic diagram illustrating the implementation strategy of a dual-peak NDT device and its ID-VG characteristics curve.(g)Circuit structure and voltage transfer characteristics of quaternary inverter.Panels(a)-(c)are from Ref.[101],and panels(d)-(g)are from Ref.[102].

3.1.Ambipolar 2D semiconductors based field-effect transistors

An ambipolar FET is of similar device configuration to traditional FETs,including source/drain/gate electrodes,channel and dielectric layers,as in Fig.1.Different from unipolar FETs,the major charge carrier type in the channel can be regulated by an external electric field, allowing the device dominated by electrons or holes following the gate to be applied with positive or negative voltages.They thus exhibit V-shaped transfer curves (Fig.1).Such characteristics can be explored for novel applications different from unipolar FETs.[99,100]For example, Huet al.[98]proposed a complementary field-effect transistor(CFET)based on ambipolar FETs by employing the idea of transitioning from planar to vertical stacking,as illustrated in Fig.2(a).In such a device, the graphene acts as an internal common gate, and the top and bottom are composed of two independent ambipolar FETs.Due to the good holes and electrons injection, the transistors at the top and bottom have similar ambipolar characteristics (Figs.2(b) and 2(c)).By assigning the polarity and amplitude byVDDandVIN, the operations of the n-channel and p-channel between the two transistors are interchangeable(Fig.2(d)).This allows for the CFET to function as an inverter working in both the first and third quadrants(Figs.2(e)and 2(f)).This switchable characteristic should be applicable for large voltage swing circuits by using only two such inverters with the advantages on simplifying the circuits and lowering consumption of electronic units like transistors,which commonly need bulky negative-voltage components in conventional design.[98]

In addition to the V-shaped transfer characteristics, researchers have also developed an inverted V-shaped transfer curve(anti-ambipolar behavior)based on ambipolar 2D semiconductors.This anti-ambipolar characteristic allows for the realization of complex electronic functionalities through a single device,greatly simplifying circuit design and manufacturing processes.Anti-ambipolar devices can be used for multivalue logic inverters and frequency doubling circuits.[103-105]As shown in Fig.3(a), the MoTe2/MoS2PN heterojunction exhibits pronounced anti-ambipolar characteristics.[101]Figure 3(b) illustrates the mechanism behind the anti-ambipolarI-Vcurves,showing the transfer characteristics of MoTe2FET(red line), MoS2FET (blue line), and the heterojunction (orange line).This anti-ambipolar characteristic can be understood as the junction being formed by the series connection of a p-type(MoTe2)FET and an n-type(MoS2)FET.Therefore,when both FETs are turned on at aroundVG=+20 V,the total current reaches its maximum value.Figure 3(c)illustrates the principle of a frequency multiplier based on the anti-ambipolar curve.An input sinusoidal signal oscillates between points A,B,and C marked on the anti-ambipolar curve, resulting in an output signal with a frequency twice than that of the input signal, reaching a maximum of 3 kHz.By utilizing the FETs based on BP devices, the maximum frequency multiplication can be further extended to 128 kHz.[96]

The anti-ambipolar behavior can also perform negative differential transconductance(NDT).Figure 3(d)displays the schematics of two types of NDT devices.[102]Combining two NDT devices with peak currents located at different positions yields a dual-peak NDT device (Fig.3(f)).The band structure of the drain-WS2-graphene and graphene-WSe2-source junction is shown in Fig.3(e).By combining the dual-peak NDT device with a p-channel transistor in series,a quaternary inverter circuit is formed(Fig.3(g)).

3.2.Ambipolar 2D semiconductors for reconfigurable rectification circuits

The p-n junction is one of the most fundamental and essential structure in semiconductors, widely used in rectifier circuits.The carrier types of ambipolar 2D crystals can be flexibly controlled with the electric field.Thus,a homogeneous p-n junction can be formed in a channel through local electric field modulation.This p-n junction can be reconfigured to other junction states by varying the electric field, enabling it with programmable ability.Researchers have developed various reconfigurable pn junction structures, such as horizontal split gates,[106-108]heterojunctions,[97]semi-floating gate structures,[29]and ferroelectric gate structures.[109-111]

Fig.4.(a) Optical image and schematic of a split-gate FET for p-n junction.(b) Ids-Vds curves of the device at different split-gate control configurations.(c)Current magnitude|Ids|through the device when the drain-source bias VDS is maintained while the two back gates vary independently.(d)Schematic of a reconfigurable p-n junction device based on an ambipolar BP/WSe2 heterojunction FET.(e)Transfer characteristic curves.(f)Performance of the device as a reconfigurable rectifier circuit.Panels(a)-(c)are from Ref.[106],and panels(d)-(f)are from Ref.[97].

In 2014,researchers fabricated p-n homojunction devices based on a parallel split-gate device structure and ambipolar 2D WSe2.[106-108]These devices exhibit switchable rectification characteristics,as shown in Figs.4(a)and 4(b).The discrete dual-gate structure divides an ambipolar channel into two regions where the electric field acts independently.This allows for localized electric field doping within the same channel material,enabling the device to operate flexibly in four different states: p-n junction,n-p junction,n-n junction,and p-p junction, as shown in Fig.4(c).Liet al.[97]fabricated a heterojunction FET based on ambipolar BP and WSe2(Fig.4(d)),which can undergo transitions between p-p junction,p-i junction, p-n junction, and n-n junction states through a control gate (Fig.4(e)).Based on the reconfiguration of the rectification states, they proposed that the device can be developed for programmable(reconfigurable)rectifier circuits(Fig.4(f)).By controlling the gate voltage, the circuit can process altering current(AC)signals to be rectified or non-rectified,which may enable rectification circuits with programmable(computing)ability.[97]

Fig.5.(a)Reconfigurable p-n junction device based on a semi-floating gate field-effect transistor.(b)Working mechanism of the device under positive control gate pulse voltage modulation.(c)ID-VDS curve across the WSe2 with a+40 V pulse on the Si.(d)Output curves under positive control gate pulse voltage.(e)Filtering characteristics of the device in different rectification states,with a schematic diagram of the rectification circuit.(f)Reconfigurable p-n junction device based on a ferroelectric parallel dual-gate FET.(g)Schematic diagram illustrating the principle.(h) BP/h-BN/graphene heterojunction with a semi-gate device.(i) Design schematic of the reconfigurable rectifier circuit.(j) Rectification results of a sine wave signal after negative gate voltage pulse(top image)and positive gate voltage pulse(bottom image).Panels(a)-(e)are from Ref.[29],panels(f)-(g)are from Ref.[111],and panels(h)-(j)are from Ref.[28].

The devices mentioned above require continuous gate voltages to maintain them in various reconfigurable states,leading to a significant energy cost.Floating gate and ferroelectric gate can address this drawback since they are of memory capability.Figure 5(a) illustrates the structure of a WSe2/h-BN/graphene-based semi-floating gate field-effect transistor device.[29]When a positive voltage is applied to the silicon control gate, electrons accumulate in the WSe2channel due to the field effect.Simultaneously, under the influence of the electric field, these electrons tunnel through the barrier layer and reach the semi-floating gate.Once the control gate voltage disappears, these electrons are stored in the semi-floating gate layer, leading to p-doping of the channel layer in the aligned WSe2(Figs.5(c) and 5(d)), thus exhibiting p-n junction behavior since WSe2is intrinsically n-type(Fig.5(b)).Under negative control gate voltage pulse, the stored holes in the semi-floating gate will dope the aligned WSe2with electrons, causing WSe2to behave as n+-n junction.This enables the formation of non-volatile p-n junction and n+-n junction in the WSe2channel, which can be utilized to develop reconfigurable logic rectifier devices and enrich the rectifier circuits with computing and memory ability (Fig.5(e)).The memory function has been also achieved by controlling the polarity of ferroelectric materials.Figure 5(f) illustrates the schematic diagram of a reconfigurable p-n junction device based on a ferroelectric parallel split-gate structure, where ferroelectric P(VDF-TrFE) film acts as the dielectric.[111]In the upward polarization state, electrons accumulate in neighboring MoTe2channel,thereby inducing ntype doping.In the downward polarization state, the channel is p-type doping.By modulating the polarization direction of P(VDF-TrFE) in different regions, the working states of np junction, p-n junction, p-p junction and n-n junction can be obtained in the device.These reconfigurable states can be maintained for a long time,which means low power consumption.

For reconfigurable rectification circuits based on programmable p-n junctions,the circuits often employ one resistor as the load(Fig.5(e)).This is not good for voltage output and circuits fabrication.To address such problem, Shenget al.proposed a complementary gate-programmable p-n junctions design, which includes two back-to-back semi-gate devices(Fig.5(h)),where the BP serves as the channel and two graphene flakes are the two semi-gates.To control the voltages on the semi-gates, the back-to-back devices can perform n-p junction and p-n junction,respectively.While AC signals input,one device favors the transportation of a certain direction of ACs,and another one blocks the transportation,which is of similar designing principle to CMOS circuits and should be of advantage on output impedance and static power consumption.If using the two semi-gates as semi-floating gates,the circuits will possess memory ability and become two back-to-back programmable p-n junction memories (Fig.5(i)).They find that the reconfiguration speed of the circuit can reach 25 µs,and it can handle reconfigurable rectification with a reconfigurable frequency of up to 1 kHz.[28]

3.3.Ambipolar 2D semiconductor for reconfigurable logic gates

As essential building blocks to perform logic operations for the data processing,logic gates play a crucial role in modern computer science.The emergence of ambipolar semiconductor devices opens up new possibilities for the future logic gates.Logic gates based on ambipolar semiconductor devices can integrate multiple logic functions by flexibly tuning the polarity of ambipolar 2D semiconductors.This property demonstrates great adaptability to different scenarios with high performance and area-efficiency.In contrast, the functionality and performance of traditional logic gates are constrained due to the limited characteristics of unipolar MOSFET.In addition, such reconfigurable feature makes it more competitive to identify specific functionality of logic gates,which signifies that they can be employed to construct secure electronic systems to provide the encryption of chip.[112]

Fig.6.(a)Schematic of an electrically tunable homojunction(ETH)device based on parallel dual-gate structure.(b)Schematic of the reconfigurable logic gate and corresponding logic functions realized by the connection of two ETH devices.(c)Circuit diagram to obtain reconfigurable microprocessor unit functions based on the connection of six ETH devices.(d)Schematic diagram of a small footprint device based on vertical dual-gate structure.The top and bottom gates serve as logic input 1 and input 2,current in device serves as logic output.(e)Transfer characteristics curves of the device via the voltage control of drain terminal.(f)Logic behaviors at VDS of 1 V and 5 V,respectively,which show logic AND and XNOR,respectively.Panels(a)-(c)are from Ref.[30],and panels(d)-(f)are from Ref.[113].

Ambipolar semiconductor devices with at least two independent gates are indispensable for developing reconfigurable logic gates.Panet al.[30]designed an electrically tunable homojunction(ETH)device based on a parallel dual-gate structure,as shown in Fig.6(a).In this device,ambipolar WSe2is selected as the channel material, and two independent gates,along with drain terminal, collectively control the transportation of the device.When different combinations of gate and drain voltage are applied, p-n, n-p, n-n, and p-p junctions can be achieved with different working states.This diversifies the field-effect characteristics at a device level, making it possible to develop reconfigurable logic gates.Based on such reconfigurable electrical characteristics, they fabricate a reconfigurable logic gate by serially connecting two ETH devices, see Fig.6(b).The single logic gate can perform as an invertor,follower,OR logic gate,AND logic gate,etc.,when two gates and a drain serve as three input terminals.In comparison, 4 transistors are required for OR or AND logic gate by using silicon-based MOSFETs.Furthermore,they propose a more complex reconfigurable logic gate based on six ETH devices.This configuration enables the realization of logic applications like MUX, D-latch, 1-bit full adder and subtractor for microprocessors(Fig.6(c)),which can significantly reduce the resource consumption of transistor and hold promising to simplify design of the microprocessors and obtain a higher area-efficiency.

To further take advantage of the performance of 2D materials for reconfigurable logic applications,Zenget al.[113]proposed a reconfigurable logic gate based on a WSe2transistor with a vertical dual-gate structure(Fig.6(d)).WSe2is an ambipolar semiconductor whose transport properties rely heavily on the magnitude ofVDS.In other words, WSe2behaves as an n-type semiconductor at a smallVDSwhile as an ambipolar semiconductor at a largeVDS, as shown in Fig.6(e).This is because a smallVDSleads to a slightly thin barrier at the drain terminal,blocking the injection of holes into the channel,even if the gate voltage is negatively biased.However,the hole barrier is dramatically thinned when the drain terminal is applied to a largeVDS, thus permitting the injection of holes and allowing WSe2to exhibit ambipolar transport behaviors.Based on this,they take the top and bottom gates as two logic inputs,the current in the device as the logic output,and realized AND and XNOR logic functions in this device via the modulation ofVDS.Such a reconfigurable logic gate thus can reduce 50%of the area for AND logic, and 87.5%for XNOR logic when compared to silicon-based logic gates, as two transistors are folded into this single device.

In addition to the advantage of area-efficiency,the reconfigurable nature of ambipolar semiconductor devices can be used to develop electronic system with hardware encryption function.Wuet al.[112]put forward a reconfigurable fieldeffect transistor based on a vertical triple-gate structure and ambipolar BP, as shown in Fig.7(a).This transistor includes a bottom gate,a top gate and a polarity gate,in which the bottom gate and the top gate are shorted.The polarity gate under the drain electrode is designed to suppress undesired carriers from the drain electrode injecting into the channel, while allowing the desired carriers into the channel (see Fig.7(b)).ForVpg<0,it only allows holes injected from the drain electrode,while electrons are suppressed.WhenVg<0,the hole injection from the source is also enabled,then the current turns on.WhenVg=0,the hole injection from the source is turned off, and the electron injection on the drain side is suppressed by the negativeVpg.Then the device is in the off state.The device thus works in a p-FET mode.A similar n-FET mode can be obtained withVpg>0.Therefore,the device can be set to a particular polarity(n-type or p-type)by tuning the polarity gate, which makes it possible to develop reconfigurable logic gate with functions of logic locking and IC camouflaging.Figure 7(c) depicts the security primitive circuit, a NAND/NOR polymorphic gate composed of reconfigurable BP transistors.It is noteworthy that the polarity gate serves as the key to configure the secure circuit to operate as NAND (keyi= 0) or NOR (keyi=1) logic gate.The logic gate can operate properly only when the correct key is set, and the wrong key will only result in a malfunctioning state and logic locking.

The devices mentioned above follow the design principle of the reconfigurable logic gate for von Neumann computing architecture,which faces limitations owing to the physical separation of data processing and memory units when dealing with large amounts of data.Logic in-memory computing architecture is more promising as it integrates processing units into memory units.Inspired by this,Sunet al.[114]proposed a partial floating-gate field-effect transistor(PFGFET)based on a vertical dual-gate structure to perform reconfigurable logicin-memory behaviors, as displayed in Fig.8(a).Here the device configuration seems similar to that in Fig.7(a), but the working principle is different.In Fig.8(a), the two partial graphene flakes under the h-BN are floating gates to trap carriers.When the control gate (CG) is subjected to positive or negative voltage pulses, holes/electrons tunnel into the floating gate layer and are trapped.The trapped charges manipulate the doping of the contact regions, while the top gate is responsible for modulating the channel regions.This allows the device to operate as a reconfigurable FET or a reconfigurable non-volatile memory.Taking the p-FET mode as an example, when the pulse onVCGis-8 V, electrons are trapped in the floating gate,leading to a negligible barrier for holes but high barrier for electrons.With negative top gate voltages applied, the device is set to on state, resulting in a high current output.When positive top gate voltages are applied, the device is set to off state with low current output.When operating as an FET,NOT logic function with a gain as high as 197 can be achieved by using an n-type and a p-type PFGFET to mimic the CMOS inverter(Fig.8(b)).When operating as a non-volatile memory, reconfigurable logic gates containing two PFGFETs in series can perform NOR, RNIMP,NIMP and AND logic functions,and simultaneously realizein situstorage of logic results (Fig.8(c)).Such reconfigurability with no more than two devices to construct a logic gate suggests great potential in high-density integration for inmemory computing architecture.Additionally,Shenget al.[27]fabricated a middle-floating-gate FET based on a WSe2/h-BN/graphene heterostructure to realize reconfigurable logicin-memory computing,see Fig.8(d).The middle floating gate(graphene), control gate (Si) andVDScan jointly control the transportation of the WSe2channel,which is similar to that in Figs.6(d)-6(f).Thus,by using the charges stored in the floating gate serve as one stored logic input,the control gate as another one,and the current in the device acts as the logic output,the single device is able to work as a memory,and perform reconfigurable AND and XNOR logic by varyingVDS(Figs.8(e)and 8(f)).This design can significantly reduce the consumption of transistors for logic gates and serve as a 2D compact reconfigurable transistor architecture in addressing the challenges posed by data-intensive applications in the future.

Fig.7.(a)Schematic of a reconfigurable BP transistor with a vertical triple-gate structure for logic applications with hardware security.(b)Energy band diagrams of the transistor in the on-state for the p-FET mode and n-FET mode.(c)Schematic diagram of a NAND/NOR polymorphic gates by tuning polarity gate of the reconfigurable BP transistors to achieve hardware encryption.All figures are from Ref.[112].

Fig.8.(a) Schematic of a partial floating-gate field-effect transistor (PFGFET) with a vertical dual-gate structure for reconfigurable logic-inmemory applications.(b)Voltage transfer characteristics and corresponding voltage gain of the CMOS inverter composed of two reconfigurable WSe2 PFGFETs.The inset shows the schematic of the inverter.(c)Reconfigurable logic gate and its logic functions obtained by two PFGFETs in series.(d) Schematic diagram of a middle-floating-gate field-effect transistor with an overlapping dual-gate structure.(e) Schematic of the device illustrating the operating principle for logic-in-memory computing.(f) Reconfigurable logic functions achieved in this single device.Panels(a)-(c)are from Ref.[114],and panels(d)-(f)are from Ref.[27].

4.Ambipolar 2D semiconductors for reconfigurable optoelectronics

Among various human senses, visual perception is particularly important.This is because 80%of the information in the natural world is perceived through the visual system.[115]To process the massive amount of data received by photodetectors, in-sensor image processing is favorable, especially in real-world and delay-sensitive applications in the era of big data, as it enables simultaneous sensing and processing of optical images without delays.For instance, rapid and accurate recognition can be achieved by convolutional neural networks (CNN) with optoelectronic device array as convolution kernels;[116]artificial neural networks (ANN) implemented with photodiode array have been used to simultaneously sense and process images projected onto chips.[5]To meet the increasing demands of image processing, it is highly desirable to develop new-principle optoelectronic devices and more advanced image sensors that possess reconfigurable and self-learning capabilities.Due to their excellent electrical,optical and photoelectrical properties,2D materials have emerged as one of the promising candidates for efficient optoelectronics.[15,117,118]For ambipolar 2D semiconductors,their major carrier types (electrons/holes) and concentrations can be dynamically,reversibly,and in real-time modulated by external electrostatic field(corresponding to positive/negative gate voltages), boosting the development of various reconfigurable functional optoelectronic devices.In 2017, Zhang’s group developed a field-programmed p-n junction diode with the device in Fig.4(d), in which the build-in electric field in the diode can be modulated by the gate voltage.This resulted in that the photovoltaic properties can be modulated by the gate voltage.Based on this principle, they proposed the device can be used for logic photodetectors that means the device has the function of integrating photo-sensing and computing(in-sensor computing).[97]Based on ambipolar 2D semiconductors,they also designed and fabricated a semi-floating gate field-effect transistor(SFG-FET,Fig.5(a)),[29]which was developed for a field-programmed nonvolatile p-n junction diode memory.Similarly, due to the modulated build-in electrical field, the device was developed with the integrated functions of photo-sensing, computing and memory (in-memory sensing and computing).These kinds of devices possess great potential in the fields of new-architecture reconfigurable neuromorphic devices,offering the possibility of achieving efficient environmental information processing.

4.1.Ambipolar 2D semiconductors for optoelectronic synapses

Numerous and various neurons constitute the neural network of the human brain, and the complexity of this network far exceeds any currently manufactured computing system.[119,120]In addition to memory cells, the human brain can make a quick and informed decision on recurring visual information, because human beings can memorize the repeated occurrence with the optimal solution, that is, the synaptic weights of this neural network have already updated to optimum by learning over and over again.[119]Synaptic plasticity is an experience-dependent change in the connections between neurons.The ability of synapses to be potentiated or depressed by changes in neuronal activity is considered to be a basic and decisive factor in learning and memory.[121-123]Synaptic plasticity mainly has two forms of long-term synaptic plasticity and short-term synaptic plasticity.The former usually lasts from a few minutes to a few hours,representing learning and memory ability, including long-term potentiation (LTP) and long-term depression(LTD),while the latter is regarded as the physiological basis of key calculations, showing a rapid decay of synaptic responses on a time scale of a few seconds,including short-term facilitation(STF),short-term depression(STD),and short-term potentiation(STP).[123,124]

In the process of simulating synaptic functionality, the internal conductivity (synaptic weight) of a synapse-like device is altered by external signals, and the conductance state is memorized by various memory mechanisms.In order to avoid refreshing the stored state or dissipating energy,the nonvolatile characteristic of memory devices is essential.[119,125]Synapse-like devices share many common characteristics of non-volatile memories (NVM), such as facilitating programming, reading, and information retention.[126]In earlier stage, researchers often achieved optoelectronic synapses by simply integrating photodetectors with non-volatile memory devices.[127-129]Emerging NVM such as phase change memory (PCM) and resistive random access memory (RRAM)have been adopted as synapse-like devices.[126]By developing weight-update optimization algorithms for memory devices,it is possible to realize brain-inspired functionality.[130]

Optoelectronic synapse-like devices mainly rely on optical signals or optical and electrical combination signals to perform synaptic functionality simulation,[131,132]which can be used to develop neuromorphic visual systems.[133]Optoelectronic synapse(it actually binds one photoreceptor neuron)can simultaneously detect and memorize optical signals.[134,135]The introduction of light stimulation extends external stimulation beyond electricity,providing another degree of freedom for controlling device performance, and opens up new possibilities for multi-gate neuromorphic structures.[136]Moreover, the optoelectronic devices based on the optical signal drive have great advantages in power consumption, speed and stability,[120,137]which can be used to construct artificial visual neuromorphic system.Based on the MoS2/h-BN structure, Sunet al.constructed synapses regulated by optical and electrical stimulations.[134]The device uses h-BN with photoactive-inherent defects to memorize weights, and the ionization and neutralization of intrinsic defects can be excited by both optical and electrical spikes.When the optical spike is applied under a negative weight control voltage,electrons are excited from the inherent defects of h-BN and injected into MoS2.The ionized defects in h-BN act as positive fixed charges, increasing the surface potential of MoS2and the electron injection rate from the presynaptic electrode to the channel region.This increases the channel conductance,which is called LTP.When the optical spike is applied under the positive weight control voltage, the photogenerated electrons fill the empty defect states in the h-BN,and the generated holes move to the MoS2region and recombine with the electrons in the MoS2conduction band.This reduces the channel conductance,known as LTD.

Liet al.fabricated a heterojunction device with n-type semiconductor CdS and ambipolar semiconductor BP(intrinsically p-type).[138]In the semi-photo-gate transistor structure as shown in Fig.9(a), BP is used as the conduction channel and CdS serves as the photo-gate layer.Only part of the BP is aligned on the CdS.Upon laser irradiation, electrons are transferred from the CdS to the BP channel, while holes are trapped in the CdS (Fig.9(b)).The holes trapped in the CdS induce mirror-image charges in the partial BP aligned on the CdS,which causes the upshift of the Fermi level and weakens the p-type characteristic(Fig.9(c)).As the illumination power increases,the BP aligned on the CdS becomes n-type,and the device is adjusted from the p-p junction (resistor) to the p-n junction(diode),resulting in a decrease in the channel current(Fig.9(d)).Light input can be used to define 2D p-n junctions instead of electrostatic field.[140]By this approach, they also develop an artificial photonic synapse based on the BP/CdS van der Waals heterojunction (Fig.9(e)).[139]Figure 9(f) is a 2D plot ofIDas a function of the light intensity andVG,which shows a negative light response of the heterojunction in more detail.When the illumination is removed, the trapped holes in the CdS can be well maintained (Fig.9(h)), so that the channel remains in a small current state(Fig.9(g)).This is the essential characteristic of the artificial photonic synapses with multimodal plasticity.Photo-activated postsynaptic current(PSC)shows a significant negative increment(defined as-∆PSC).In dark conditions, the positive gate voltage drives electrons to transfer into the CdS and recombine with trapped holes, resulting in a decrease of-∆PSC, which is a synaptic depression process.Based on the synergistic effect of optical programming and electrical erasing in the artificial synapse,LTP induced by light stimulation and LTD driven by electrical input are clearly demonstrated in Fig.9(i).

Fig.9.(a) Schematic of the semi-photo-gate transistor device structure.(b) Separation of the electron-hole pairs in the CdS under laser illumination.(c) Charge carrier modulation in the BP over the CdS photo-gate layer.(d) ID-VDS curves across the BP under different laser powers.(e)Schematic of the artificial photonic synapse based on BP/CdS vdWs heterojunction.(f)2D plot of ID as a function of light power intensity and VG.(g)Photo-activated postsynaptic current of the artificial photonic synapse(-∆PSC)after irradiation.(h)Working mechanism of the BP/CdS heterojunction.(i)LTP/LTD properties of the artificial photonic synapse.Panels(a)-(d)are from Ref.[138],and panels(e)-(i)are from Ref.[139].

4.2.Ambipolar 2D semiconductors for reconfigurable devices in neural networks

The key to neuromorphic computing lies in emulating the architecture and functionality of biological neural networks,thereby achieving brain-like high energy-efficiency and low power-consumption computation.[143]To construct a neural network, researchers need to develop electronic components with reconfigurable characteristics,allowing flexible resource allocation for different computing tasks.[144]Reconfigurable circuits possess the ability of self-adjustment to dynamically behave like neurons or synapses in biological neural systems.[145-147]These circuits can simulate synaptic behaviors such as LTP and LTD.[148]With reconfigurable circuits with self-adjustment capacity,efficient neural network models that apply to various tasks can be developed.

ANN and CNN are common neural network models for image and data processing, as shown in Fig.10.In ANN,inputs are received by presynaptic neurons and weighted by synapses, and then the weighted inputs are transformed into an activation function and become new inputs of postsynaptic neurons.The neuron-layers in the ANN are all fully connected layers,meaning that each neuron of the hidden layer and output layer is connected to every neuron of the upper layer.ANN is suitable for various tasks such as classification, regression,and clustering.

Fig.10.(a)Schematic of an ANN architecture with feedforward and backpropagation algorithms.[141] (b) Schematic of the CNN architecture and training process.[142]

CNN is a more complex neural network than ANN, primarily used for image processing.The feature of the CNN is that it includes convolutional layer and pooling layer in addition to fully connected layer.The convolutional layer extracts feature from images by sliding different kernels and generates feature maps.And the pooling layer reduces the size of the feature maps.CNN gradually extracts high-level feature from images through multiple convolutional and pooling operations,and then performs classification or regression tasks by fully connected layer.CNN has achieved significant success in the field of machine vision system.It can automatically obtain features of images, such as edges, textures, and shapes,further fulfill tasks like image classification, object detection,and image segmentation.

Fig.11.(a)Schematic of a single WSe2 photodiode.(b)Macroscopic image of the photodiodes array.(c)Schematic of the classifier.(d)Average current of each projected letter was measured at each epoch during training with a noise level of σ=0.2.(e)h-BN/WSe2 synaptic device integrated with a h-BN/WSe2 photodetector.(f) Plasticity behavior of peak-timing-dependent in the synaptic-like device.(g) Long-term potentiation and depression curves under different wavelengths of light illumination.(h)Conventional neural network and artificial optical neural network for color image recognition.(i)Recognition rate as a function of training epochs.(j)Weight mapping image after the 600th training epochs.Panels(a)-(d)are from Ref.[5],and panels(e)-(j)are from Ref.[149].

Ambipolar 2D semiconductors have excellent electronic and photoelectric properties, which can constitute a reconfigurable photodetectors array with linear light intensity dependence.[150]Encoding the weights by gate-voltage matrix, the reconfigurable photodetectors array exhibits the capacity of image processing.[116]The integration of synapse behavior and photoreception possesses promising opportunities for neural network with simultaneous sensing and computing capacities,enabling low power-consumption and delayfree image recognition.[149]With ambipolar semiconductors,it becomes possible to directly receive external visual information and obtain pre-processed visual data in artificial visual systems.Simultaneously, neuromorphic computing can combine various sensors with a wide range of perception like vision, touch, and hearing.[119]Mennelet al.[5]fabricated a photodiode array that can simultaneously sense and process the image projected onto the chip.The sensor uses the photoresponsivity matrix to perform real-time multiplication by the light intensity distribution of the projected image.Themth detector element of each pixel performs the matrix vector product operation and is added for general photocurrent,Im=∑Nn=1Imn=∑Nn=1RmnPn.Figure 11(a)is the schematic diagram of a WSe2-based photodiode.WSe2is chosen because of its ambipolar conduction behavior and excellent photoelectric properties.The photo-response can be set by electrostatic doping of the gate electrodes.Two functions of the ANN are implemented: classifier and autoencoder.Figure 11(c) is the schematic diagram of the classifier, which is used to identify the letters n, v and z.In Fig.11(d), the average current generated by letter projected on the chip of each epoch is shown.The general currents become well distinguishable after about 10 epochs,and the maximum current corresponds to the label of the projected letter.

Seoet al.[149]integrated a synapse-like device with an optical-sensing device with the same h-BN/WSe2heterostructure (Fig.11(e)).The synapse-like device, whose synaptic weights were determined by the WSe2channel conductivity,relied on the capture or release of electrons in the weight control layer (WCL).Due to higher light absorption at shorter wavelengths, the resistance of the device was modulated as a function of the wavelength of the incident light, making it capable of color recognition.The device was controlled by input pulses with an amplitude of 0.3 V, enabling LTP/LTD and spike-timing-dependent plasticity (STDP) as depicted in Figs.11(f) and 11(g), thus exhibiting learning and memory capabilities,[124]along with the potential for application in spiking neural networks.Utilizing the extracted device parameters and a simple perceptron network model, an optical neural network (ONN) was developed.Two types of neural network were implemented for recognizing target-color numbers from mixed-color images, as shown in Fig.11(h).After the 50th epoch,the recognition rate of the ONN exceeded 90%as demonstrated in Fig.11(i),significantly outperforming the neural network without optical sensing capability.Due to the strongest photo-response to blue light input, the synaptic weights for the blue pattern were higher than those for other colors after 600 training epochs,as illustrated in Fig.11(j).

To meet the increasing demands of high-speed and low power-consumption image processing, it is highly desirable to employ reconfigurable photodetectors to build reconfigurable convolutional kernels for advanced image sensors to construct CNN with improved image processing architecture than ANN.As we mentioned above, ambipolar 2D semiconductors are suitable for optoelectronic devices.By encoding synaptic weights through a gate voltage matrix,different convolutional kernels can be constructed.Janget al.[151]fabricated an in-sensor computing device using electrostatically doped dual-gate silicon p-i-n photodiode,which can be used for convolutional neural networks.It contains two contact electrodes on the intrinsic silicon wafer to provide the current path, and two top gate metal electrodes (Fig.12(a)).When the top gate electrodes are biased with voltages of the same magnitude but opposite signs, electrostatically doped p and n regions are created.The silicon region not covered by the top gate metal is the intrinsic region, acting as the photosensitive area.Altering the gate voltage modifies the built-in potential(Vbi)(Fig.12(a)),consequently modifying the magnitude and direction of the photocurrent for a given incident light power,as shown in Fig.12(b).A 3×3 network of the electrostatically doped photodiode is used as an optical convolution processor, which can be electrically programmed into different convolutional filters (Fig.12(c)).By designing image filtering kernels, the 3×3 photodiode network not only captures the input scene but also processes it simultaneously.Different combinations of gate voltages can achieve distinct repeated processing of the internal sensor images using various filtering kernels,as illustrated in Figs.12(d)and 12(e).Piet al.[150]utilized PdSe2/MoTe2vdW heterostructure,which also possesses gate-tunable positive and negative photo-responses,as well as linear gate-dependent photoresponsivity and broadband sensing capability.Different objects emit light at different wavelengths.Therefore,in applications such as remote sensing and environmental monitoring, broadband convolutional processing is crucial for high-precision image recognition.

The visual sensor constructed with the aforementioned ambipolar 2D semiconductors possesses integrated optical and static signal and processing capability but lacks the ability to store visual information,thereby preventing the extraction and processing of moving objects.[116]However, in the era of the internet of things(IoTs),there are increasing demands for realtime and accurate detection of moving objects.[153]It requires the integration of memory cell,computing unit and perception sensor within the vision sensory system.[154]Zhanget al.[152]proposed a BP/Al2O3/WSe2/h-BN heterostructure as neuromorphic optoelectronic device, which adopted a floating-gate structure for charge storage and electrostatic doping of the BP channel.The photoelectric synergistic regulation changes the stored charge in the floating gate WSe2to achieve positive and negative photoconductivities.The device realizes motion detection without extensively redundant and static information by reconfiguring the switch states, as shown in Fig.13.By mapping the conductivity states of the visual sensory array,rapid and accurate motion recognition can be achieved.The spatial information with light intensities of the images corresponding to the start and end of the motion is multiplied by the positive and negative conductivity matrices, respectively,and then added together,resulting in a final pixel output(W1X+W2Y).Due to the similar absolute values but opposite directions of the positive and negative conductivity matrices,if there are no moving objects,the brightness distribution of almost all pixel outputs is close to zero.However, for a moving object,the amplitude difference cannot be completely canceled,and the detection result appears as bright spots distributed in the processed current map.

Fig.12.(a)Part of the SEM image of the device(top)and the corresponding schematic(bottom)of the cross-sectional view of the photodiode,gate biased to form p-i-n and n-i-p configurations.(b)The photocurrents of a red-filtered halogen lamp at different gate voltages.(c)An SEM image of nine example photodiodes.(d)Programmed photocurrent map with a fixed power of light.(e)Various filtered images were obtained with digital computing(top)and in-sensor computing(bottom).All figures are from Ref.[151].

Fig.13.Method for motion detection implemented by the device array: by detecting and differencing the images at different time points, the motion detection scheme can identify bright spots for moving objects and dark spots for static objects.[152]

5.Conclusion and outlook

After a simple introduction of ambipolar 2D semiconductors,this review provides an overview of the recent progress of their applications on reconfigurable electronic and optoelectronic devices.Ambipolar 2D semiconductors are of excellent gate control capabilities and unique physical properties,allowing for dynamic and reversible modulation of the major charge carriers between holes and electrons via electric field.Such characteristic enables them conductive to develop reconfigurable electronic and optoelectronic devices, including ambipolar FETs for CFET-like inverters working in the first and third quadrants,anti-ambipolar FETs for multi-value logic inverters and frequency doubling circuits, programmable pn junctions for reconfigurable rectification circuits, reconfigurable logic gates, and reconfigurable optoelectronic devices in neuromorphic circuits.These applications have shown great potential in computing capacity,energy efficiency,time delay and cost, and thus flourished studies in this field.Although a significant progress has been achieved in this field, there are still some crucial challenges that need to be addressed.

(i)From a single-device perspective,device performance needs to be optimized and improved.Material, contact, and interface are three key factors to affect the device’s performance.Up to now, over 20 kinds of ambipolar 2D semiconductors have been revealed, part of which have been developed for polarity-controlled devices.With the deepening of the study,more ambipolar 2D semiconductors are expected to be discovered.This will provide an experimental foundation to explore excellent ambipolar devices with wanted functions.In the future,it is necessary to target the application fields and scenarios to exploit suitable ambipolar 2D semiconductors for high-performance devices and chips, and build a database of materials including their device performances and application fields.

For contact, ambipolar-based devices require the transmission of both holes and electrons.The intrinsic property of metal-semiconductor ohmic contact decides that the p-type contact is only conductive to holes,and n-type contact is only beneficial for electrons.The current method adopts Schottky contact to balance the transmission of holes and electrons.It means both holes and electrons have to overcome their corresponding barrier potentials, which hinder the improvement of device performance.Better techniques and theories are required to be developed to address such issues.Recently,Wanget al.[155]used van der Waals contact between WSe2and Pd/Cr to improve the ambipolar behavior.They found the effective barrier height for holes and electrons in such a configuration can be negligible.Zhanget al.[156]defined a feasible strategy for removing the Schottky barrier of metalsemiconductor contact.The full van der Waals barrier-free contact between a p-type Te semiconductor and a layered 1T′-WS2semi-metal has been reported,achieving a zero Schottky barrier height of 3±9 meV and a high field-effect mobility of≈1304 cm2·V-1·s-1.These methods provide valuable ways and should be helpful in improving the contact of ambipolar 2D semiconductors.In the future,more methods and theories are urgently needed to resolve the contact issue whether for device performance or large-scale integration.

The interface between 2D materials has a great effect on device performance.Ultrathin 2D materials possess perfect crystalline structures and surfaces.Theoretically, the composed devices should be of clean and sharp interfaces.In real fabrications, the interface is usually affected by many factors like the growing and transferring techniques, which often result in contaminations, wrinkles, and bubbles.An effective process should be developed to resolve such concerns.It is worth noting that it is a systemic issue for contact, material,and interface.To improve the device performance,we should systemically study these concerns in some certain application fields and scenarios.

(ii) From an application perspective, it is still limited by the large-scale high-quality semiconductors, mature process of ambipolar device fabrication and integration, circuit design methodology, and algorithm.Although tens of ambipolar 2D semiconductors have been discovered, current highquality materials are usually acquired by mechanical exfoliation method from bulk crystals.There is still a big challenge to get high-quality large-scale ambipolar 2D semiconductors.This needs researchers to develop effective,low-cost,and technique-compatible methods, or search around in the conventional material and technique warehouse.In the last decade,great success has been achieved for the growth of 2D materials by some techniques like chemical vapor deposition(CVD),molecular beam evaporation(MBE),and atomic layer deposition (ALD), which should be helpful in the growth of ambipolar 2D semiconductors.

Currently, in pursuit of achieving versatile functionalities, the designed reconfigurable devices often possess intricate structures.However, for practical applications, there is a need to explore device architectures that are suited for integration and miniaturization.For instance, the emerging inmemory computing devices and in-sensor computing devices should be developed in the use of neuromorphic computing systems and numerical computations.[157-159]As neural networks continue to scale up, it is becoming increasingly necessary, from a hardware implementation perspective, to develop device structures that are more suitable for integration to facilitate larger-scale production.Simple and reliable device structures, as well as mature fabrication and integration processes get to be emergent.One possible way is to graft ambipolar 2D semiconductors in the conventional device structures.Another possible way is to develop full 2D devices,which can be assembled by van der Waals force to avoid many problems in conventional routines.Memories based on ferroelectric FETs are of simple device structure.α-In2Se3, as a 2D ferroelectric material (2DFM) with high Curie temperature, has been used to construct a van der Waals (vdW) ferroelectric tunnel junction (FTJ) memory with excellent reliability at both room temperature and high temperatures.[160]The memory has a long retention time at high temperatures and a reliable cycle life, which shows good thermal stability of vdW FTJ memory.1L-MoS2/WSe2/graphene heterostructures with efficient photocarrier collection and gate modulation achieve high EQE (61%) and exhibit ultra-fast optical response (4.1 µs) at the atomic thin limit (8 nm).[161]These exploratory research achievements may be used for reference in the preparation of ambipolar-based simple-structure devices for high-performance applications.

In addition,the composed new-architecture chips are different from the conventional ones, so a new circuit design methodology has to be developed for the large-scale integration.These new-architecture chips often excel at performing multiply accumulate (MAC) operations efficiently, particularly in executing vector-matrix multiplication(VMM).However, they face the challenge of being locked into specific algorithms.The achievement of cooperativity between these structures and algorithms requires further exploration.Considering the foreseeable difficulties of traditional semiconductor devices and computing architectures, it is of great motivation to address such issues.

(iii) Vertical assembling of 2D materials may be a valuable way for further study and applications, which are promising to transcend the chip size limits.[162,163]Vertical heterostructures formed by multiple stacking via van der Waals integration, provide a method for three-dimensional integration of 2D materials at both the device and circuit levels.[164]Due to their extremely thin thickness, 2D vertical heterostructures provide a short diffusion distance for charge carriers.[165,166]In contrast to laterally stacked heterojunctions,vertically stacked heterostructures offer a larger surface area for the interface of layered materials and involve tunneling effect between the two layers,making it highly suitable for photosensitive device applications.[167]

Vertical van der Waals heterostructures combined with ambipolar 2D semiconductors allow for the integration of highly disparate materials with crystal lattice mismatching.[168]They have been employed in the construction of high-performance electronic and optoelectronic devices, such as ReSe2/MoS2van der Waals heterostructures,which exhibit ultra-fast and linear polarization-sensitive photodetectors,[169]vertical MoS2/WS2heterostructure with ambipolarity behavior,[170]vertical graphene/WS2/graphene van der Waals heterostructure with a low off-state current and a high ON/OFF ratio,exhibiting both n-type and bipolartype conduction,[171]ReSe2/PtSe2heterojunction for highperformance photodetectors,[172]WSe2/InSe heterostructure photodetector with ambipolar photoresponsivity,[173]and ambipolar SnO/SnS heterojunction transistors employed to build CMOS inverters.[174]Such investigations indicate that vertical heterostructures hold great potential for use in reconfigurable devices towards high-performance integrated circuits and systems.

We hope this review will help to push forward the studies of ambipolar semiconductors, including the theories, materials,devices,process of integration,circuits methodology,and application algorithm.

Acknowledgments

Project supported by the National Natural Science Foundation of China (Grant No.62274037), the National Key Research and Development Program of China (Grant No.2018YFA0703703), the Ministry of Science and Technology of China(Grant No.2018YFE0118300),and the State Key Laboratory of ASIC&System(Grant No.2021MS003).